Semiconductors & Advanced Computing

Compound & Power Semiconductors

The capacity to develop and produce compound, wide-bandgap and power semiconductors, the device families that carry power electronics, radio frequency and extreme environments.

Capability group
Semiconductors & Advanced Computing
Domain
Critical Technology · Hard Power
Identifier
factbase.org/cap/H4YJ782F1R
Reference
Wide-bandgap semiconductor Wikipedia

Papers

27.7k

2020–2024

Paper growth

+11%

2020–24 on 2015–19

Patent families

26.3k

2020–2024

Filed abroad

42%

families in more than one office

In the framework

What the capability covers and what it leaves to others, and the indicators it will be measured by.

Bounds

Covers compound and power device technology; its applications read under the energy, connectivity and defence capabilities, and its materials base is shared with the materials group.

Lineage

Relocated in v0.1 from the materials group (formerly Wide and ultrawide bandgap semiconductors) at the same level, carrying its identifier under the relocation convention: the node is a semiconductor device family and belongs with its value chain.

Indicators

  • wide-bandgap device production sharePending
  • power semiconductor revenue sharePending
  • compound wafer capacityPending

Research

Papers classified to the capability, by year and by the nation of their authors' institutions, 2020–2024. Read from the v0.0 research topic Wide and ultrawide bandgap semiconductors.

Papers by year

The five leading nations, papers by year

Share of papers, 2020–2024

Of papers with a known author nation; 22% have none and are left out.

  1. 1China27.4%7,286 papers
  2. 2United States15.2%4,058 papers
  3. 3Japan7.9%2,104 papers
  4. 4India6.3%1,665 papers
  5. 5Germany4.3%1,141 papers
  6. 6South Korea3.4%902 papers
  7. 7United Kingdom3.0%792 papers
  8. 8Taiwan2.8%748 papers
  9. 9France2.5%673 papers
  10. 10Italy2.4%652 papers

Leading institutions, 2020–2024

By fractional count: each paper divided among its authors' institutions.

  1. 1Xidian University430fractional papers
  2. 2Chinese Academy of Sciences251fractional papers
  3. 3Zhejiang University199fractional papers
  4. 4The Ohio State University175fractional papers
  5. 5National Yang Ming Chiao Tung University169fractional papers
  6. 6University of Electronic Science and Technology of China164fractional papers
  7. 7Xi'an Jiaotong University156fractional papers
  8. 8University of Science and Technology of China148fractional papers
  9. 9Nagoya University140fractional papers
  10. 10Shandong University136fractional papers

Patents

Patent families by the nation of origin of their applicants and their earliest priority year, from the CPC and IPC classes the capability is read from. 2025 onwards is incomplete: families are published 18 months after priority.

Families by priority year

The five leading origins, families by year

3,833 applicants filed here in 2015–2024; the five largest held 19% of families (HHI 118 of 10,000: unconcentrated).

Share of families by origin, 2020–2024

  1. 1China50.1%13,165 families
  2. 2Japan17.8%4,664 families
  3. 3Taiwan9.8%2,581 families
  4. 4United States8.9%2,347 families
  5. 5South Korea6.5%1,710 families
  6. 6Germany2.0%513 families
  7. 7Austria0.8%213 families
  8. 8Switzerland0.7%195 families
  9. 9France0.7%182 families
  10. 10Netherlands0.5%125 families

Applicants filing most internationally, 2015–2024

Families filed in more than one office, by applicant as the offices name them.

  1. 1TAIWAN SEMICONDUCTOR MFG CO LTD1,800international families
  2. 2TOSHIBA KK1,058international families
  3. 3SAMSUNG ELECTRONICS CO LTD1,012international families
  4. 4TOSHIBA CORP1,008international families
  5. 5FUJI ELECTRIC CO LTD981international families
  6. 6MITSUBISHI ELECTRIC CORP736international families
  7. 7TOSHIBA ELECTRONIC DEVICES & STORAGE CORP652international families
  8. 8INTEL CORP576international families
  9. 9TAIWAN SEMICONDUCTOR MFG545international families
  10. 10ROHM CO LTD528international families

Classification read

  • H10D62/85 Group III-V semiconductor bodies, e.g. gallium nitride, gallium arsenide · 89.3k documents
  • H10D62/8325 Silicon carbide device bodies · 53k documents
  • H10D62/8303 Diamond device bodies · 6.7k documents
  • H10D62/82 Heterojunction device bodies · 56.8k documents
  • H10D30/47 High-electron-mobility transistors · 86k documents
  • H10D12/00 Insulated-gate bipolar transistors · 121.4k documents
  • H10D30/64 Power DMOS transistors · 118k documents
  • H10D8/60 Schottky diodes · 28.6k documents
  • H10D18/00 Thyristors · 20.9k documents
  • C30B29/36 Silicon carbide and other carbide crystals · 18.2k documents
  • C30B29/38 Nitride crystals · 5k documents
  • C30B29/40 Group III-V compound crystals · 36.1k documents

Shares inventions with

Capabilities whose classes the same families also fall in, by overlap (Jaccard).

Companies

50 companies in this capability, across 6 regions. The leading 12:

  1. 1Infineon TechnologiesWorld's largest power semiconductor supplier, producing silicon IGBTs/MOSFETs, CoolSiC silicon-carbide devices and CoolGaN (after acquiring GaN Systems in 2023), with a 200mm SiC fab in Kulim, Malaysia.Manufacture
  2. 2onsemiVertically integrated SiC producer (from boule growth in New Hampshire to EliteSiC MOSFETs and modules) and a leading supplier of automotive power devices, with a SiC expansion in Rožnov, Czech Republic.Manufacture
  3. 3STMicroelectronicsLeading SiC MOSFET supplier (main supplier to Tesla's traction inverters), building an integrated SiC campus in Catania, Italy, and a 200mm SiC joint venture with San'an in Chongqing, alongside a GaN power line.Manufacture
  4. 4WolfspeedLargest merchant supplier of SiC substrates and operator of the world's first 200mm SiC device fab (Mohawk Valley, NY); it restructured through Chapter 11 in 2025 and emerged with new equity.Manufacture
  5. 5Mitsubishi ElectricLeading supplier of IGBT and SiC power modules for rail, industrial and EV use, and of GaN/GaAs high-frequency devices; it is building an 8-inch SiC fab in Kumamoto.Manufacture
  6. 6ROHMVertically integrated SiC maker through its German subsidiary SiCrystal (substrates) and its Miyazaki fabs; it pioneered mass-produced SiC MOSFETs and supplies GaN EcoGaN devices.Manufacture
  7. 7Fuji ElectricMajor producer of IGBT and SiC power modules for EVs, industry and renewables, and one of the top international patent filers in power devices.Manufacture
  8. 8ToshibaThrough Toshiba Electronic Devices & Storage it is a top power MOSFET/IGBT and SiC supplier, building a 300mm power fab in Ishikawa and collaborating with ROHM on power devices; it has been privately owned since its 2023 buyout.Manufacture
  9. 9QorvoLeading GaAs and GaN-on-SiC RF device maker and a DoD Trusted foundry (Richardson, Texas) for defence radar MMICs; a merger with Skyworks was announced in 2025.Manufacture
  10. 10Coherent Corp.Second-largest SiC substrate and epiwafer supplier (ex-II-VI) with 200mm production; its SiC business is backed by Denso and Mitsubishi Electric investment, and it also makes InP and GaAs compound devices.Equipment & materials
  11. 11SICC (Shandong Tianyue Advanced Technology)One of the world's top two or three SiC substrate makers by share, supplying conductive 6/8-inch wafers to Infineon and Bosch; it has an additional Hong Kong listing.Equipment & materials
  12. 12San'an OptoelectronicsChina's largest compound semiconductor manufacturer (GaN/GaAs LEDs, RF and power) whose Hunan San'an unit runs a vertically integrated SiC line and a Chongqing 200mm SiC JV with STMicroelectronics.Manufacture
All 50 in the Companies table →